| PART |
Description |
Maker |
| G7881-21 G7881-22 G7881-23 G7881-32 G7881-44 G8339 |
Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH
Aluminum Snap-In Capacitor; Capacitance: 100uF; Voltage: 400V; Case Size: 20x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 6800uF; Voltage: 25V; Case Size: 25x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 35x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 400V; Case Size: 20x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 680uF; Voltage: 400V; Case Size: 35x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 100uF; Voltage: 400V; Case Size: 22x25 mm; Packaging: Bulk 铟镓砷PIN光电二极管和前置放大
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 400V; Case Size: 25x50 mm; Packaging: Bulk 铟镓砷PIN光电二极管和前置放大
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 250V; Case Size: 30x25 mm; Packaging: Bulk 铟镓砷PIN光电二极管和前置放大
FIBER OPTIC RECEIVER, 1250Mbps, PANEL MOUNT, LC CONNECTOR
Aluminum Snap-In Capacitor; Capacitance: 68uF; Voltage: 400V; Case Size: 20x25 mm; Packaging: Bulk
|
HAMAMATSU[Hamamatsu Corporation]
Hamamatsu Photonics K.K.
|
| G8343-11 G8343-12 G8343-21 G8343-22 G8343-31 G8343 |
InGaAs PIN photodiode with preamp
Aluminum Snap-In Capacitor; Capacitance: 1500uF; Voltage: 160V; Case Size: 25x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 35x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 180uF; Voltage: 400V; Case Size: 30x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 450V; Case Size: 25x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 200V; Case Size: 22x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 400V; Case Size: 25x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 200V; Case Size: 25x50 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 25x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 30x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 270uF; Voltage: 400V; Case Size: 22x50 mm; Packaging: Bulk
Optoelectronic 光电
InGaAs PIN photodiode with preamp 铟镓砷PIN光电二极管和前置放大
|
HAMAMATSU[Hamamatsu Corporation]
NXP Semiconductors N.V.
Hamamatsu Photonics K.K.
|
| CD297BB |
EC Snap-In 105°C Extended Lifetime 7.000h High Ripple Currents(Snap-In)
|
Jianghai Europe GmbH
|
| CD299PG |
EC Snap-In 105∑C Longest Lifetime 9.000h High Ripple Currents Miniaturized(Snap-In)
|
JIANGHAI[Jianghai Europe GmbH]
|
| AK9813AF |
Aluminum Snap-In Capacitor; Capacitance: 1200uF; Voltage: 160V; Case Size: 25x45 mm; Packaging: Bulk
|
Asahi Kasei Microsystems Co.,Ltd
|
| BUK98150-55 |
TrenchMOS transistor Logic level FET
Aluminum Snap-In Capacitor; Capacitance: 1200uF; Voltage: 160V; Case Size: 30x35 mm; Packaging: Bulk
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BUK9514-55 |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 25x35 mm; Packaging: Bulk
TrenchMOS transistor Logic level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| KA2139 |
Tantalum Molded High Capacitance Capacitor; Capacitance: 10uF; Voltage: 16V; Packaging: Tape & Reel 三通道RGB视频放大
3 CHANNEL R.G.B VIDEO AMPLIFIER
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| GAL16V8D-20QPI GAL16V8D-20QJI GAL16V8D-7LP GAL16V8 |
Aluminum Snap-In Capacitor; Capacitance: 2700uF; Voltage: 160V; Case Size: 30x50 mm; Packaging: Bulk
High Performance E2CMOS PLD Generic Array Logic EE PLD, 25 ns, PQCC20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 3.5 ns, PQCC20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 7.5 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 15 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 7.5 ns, PDSO20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 25 ns, PDIP20
High Performance E2CMOS PLD Generic Array Logic EE PLD, 15 ns, PQCC20
IC,MICROCONTROLLER,8-BIT,68HC08 CPU,CMOS,DIP,8PIN,PLASTIC RoHS Compliant: No
|
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
|
| AD644J AD644L AD644K AD644S |
Dual High Speed/ Implanted BiFET Op Amp
Ceramic Multilayer Capacitor; Capacitance:22000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Series
10 UF 10% 10V TANT ESR=2R CAP SMT (0805)
|
Analog Devices, Inc.
|
| M48T18-150PC1 M48T18-150MH1 M48T18-150MH1TR M48T18 |
64 Kbit 8Kb x 8 TIMEKEEPER SRAM 64千位kB × 8计时器的SRAM
High Q MLC; Capacitor Type:High Q; Capacitance:1000pF; Capacitance Tolerance: /- 10%; Voltage Rating:1500VDC; Capacitor Dielectric Material:Multilayer Ceramic; Termination:SMD; Dielectric Characteristic:C0G/NP0; Series:HQCC RoHS Compliant: Yes
64K (8K X 8) TIMEKEEPER SRAM
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
